Ultrahigh fT and fmax new self-alignmentInP/InGaAs HBT's with a highly Be-doped base layer grown by ALE/MOCVD |
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Authors: | Shigematsu H Iwai T Matsumiya Y Ohnishi H Ueda O Fujii T |
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Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
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Abstract: | We report on a new self-alignment (SA) process and microwave performance of ALE/MOCVD grown InP/InGaAs heterojunction bipolar transistors (HBT's) with a base doping concentration of 1×102 0 cm-3. We obtained fT of 161 GHz and fmax of 167 GHz with a 2×10 μm emitter. These high values indicate the best performance of InP/InGaAs HBT's ever reported, in so far as we know. These values were attained by reducing the base resistance using ALE/MOCVD and base-collector capacitance using a new SA process. These results indicate the great potential of these devices for ultrahigh-speed application |
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