370 W output power GaN-FET amplifier for W-CDMA cellular base stations |
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| Authors: | Wakejima A. Matsunaga K. Okamoto Y. Ando Y. Nakayama T. Miyamoto H. |
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| Affiliation: | R&D Assoc. for Future Electron Devices, NEC Corp., Otsu Shiga, Japan; |
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| Abstract: | A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm/sup 2/ is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power. |
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