In situ measurement of silicon oxidation kinetics by monitoring spectrally emitted radiation |
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| Authors: | Gerhard H Schiroky |
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| Affiliation: | (1) GA Technologies, Inc., John Jay Hopkins Drive, 92121 San Diego, California, USA;(2) Present address: Lanxide Corporation, Tralee Industrial Park, 19711 Newark, Delaware, USA |
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| Abstract: | When a highly polished silicon wafer is thermally oxidized, its spectral emittance fluctuates systematically, as the protective silica film grows thicker. If the spectral intensity of the emitted radiation at a wavelength where silica is transparent is monitored, the film thickness can be obtained. |
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