Rapid thermal nitridation of thin SiO2 films |
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Authors: | D. Henscheid M. N. Kozicki G. W. Sheets M. Mughal I. Zwiebel R. J. Graham |
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Affiliation: | (1) Center for Solid State Electronics Research, Arizona State University, 85287-6206 Tempe, Arizona;(2) Center for Solid State Science, Arizona State University, 85287-1704 Tempe, Arizona |
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Abstract: | An alternative to SiO2 for gate dielectric applications in MIS devices is nitrided silicon dioxide. A study of this material is presented in this paper. Thin SiO2 layers (10 nm minimum thickness) were grown on silicon substrates and subsequently nitrided in ammonia at 1 atm using a rapid thermal processing system. Nitridation times ranged from 3 sec to 60 sec at temperatures from 900 to 1200‡ C. The resulting films were then characterized using a variety of techniques including high resolution TEM, XPS, AES, SIMS, and electrical measurements (C-V). Higher temperatures and longer processing times resulted in the accumulation of nitrogen at the film surface and at the Si/SiO2 interface. As expected, the electrical characteristics of the nitrided films were strongly influenced by the processing conditions. The morphology of the interface, as revealed by high-resolution TEM, was also altered by the nitridation process, especially for high processing temperatures (>1000° C). |
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Keywords: | Nitridation dielectric applications SiO2 |
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