磁控溅射二氧化硅薄膜的制备工艺

研究了在半绝缘ＧａＡｓ衬底上磁控溅射ＳｉＯ＿２薄膜的工艺技术。对影响生长薄膜的因素进行了实验分析，给出了生长速率、腐蚀速率及组分等参数与工艺条件的关系。实验证明，和其它镀膜技术相比，磁控溅射可以在更低的温度下制作致密、均匀、重复性好的ＳｉＯ＿２膜。

Processing of SiO_2 Film by Magnetron Sputtering

In this paper,a study was carried out for the deposition of SiO_2 film,by magnetron sputtering on semi-insulating GaAs substrate. Some factors af-fecting SiO_2 film deposition were analysed experimentally. We also discusse the dependence of parameters,such as deposition rate, etching rate, and composi-tion on the process conditions.By comparing with other deposition process,compact, uniform, and reproduceable SiO_2 films were obtained at lower tempe-rature by magnetron sputtering.