| f_T为9GHz的SiGe／Si异质结双极晶体管 |
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| 引用本文： | 邹德恕 陈建新. f_T为9GHz的SiGe／Si异质结双极晶体管[J]. 北京工业大学学报, 1996, 22(4): 55-59 |
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| 作者姓名： | 邹德恕 陈建新 |
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| 作者单位： | 北京工业大学和北京市光电子技术实验室 |
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| 摘 要： | 叙述了ＳｉＧｅ／Ｓｉ异质结双极晶体管（ＨＢＴ）的设计考虑，双台面结构的制作方法，并制作出ｆ_Ｔ为９ＧＨｚ的ＳｉＧｅ／ＳｉＨＢＴ。同时根据对不同尺寸ＨＢＴ的测试结果得到分布参数是影响ｆ_Ｔ的重要因素之一。
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| 关 键 词： | 硅锗合金，异质结构，双台面结构 |
SiGe/Si Heterostructure Bipolar Transistors (HBTs) with f_T up to 9GHz |
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| Zou Deshu, Chen Jianxin, Gao Guo, Shen Guangdi,Du Jinyu, Wang Dongfeng, Zhang Shiming, Yuan Ying. SiGe/Si Heterostructure Bipolar Transistors (HBTs) with f_T up to 9GHz[J]. Journal of Beijing Polytechnic University, 1996, 22(4): 55-59 |
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| Authors: | Zou Deshu Chen Jianxin Gao Guo Shen Guangdi Du Jinyu Wang Dongfeng Zhang Shiming Yuan Ying |
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| Abstract: | SiGe/Si HBT's design is considered; the processing of a double mesa struncture is discussed. SiGe/Si HBTs with different sizes are fabricated, in which the maximum fT is up to 9GHz. Measurement shows that the distribution parameters are the main factors which influcence fT. |
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| Keywords: | SiGe alloy heterostructure double mesa structure |
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