基于磨粒运动轨迹的硅片化学机械抛光材料去率研究

硅片化学机械抛光（CMP）是机械作用与化学作用相结合的技术，硅片表面的化学反应层主要是由抛光液中磨料的机械作用去除，磨粒对硅片表面的摩擦和划擦对硅片表面材料的去除起着重要作用。磨粒在硅片表面上的划痕长度直接影响硅片表面的材料去除率。本文首先在实验结果的基础上分析了硅片CMP过程中磨粒的分布形式，然后根据运动学和接触力学理论，分析了硅片、磨粒及抛光垫三者之间的运动关系，根据磨粒在硅片表面上的运动轨迹长度，得出了材料去除率与抛光速度之间的关系，该分析结果与实验结果一致，研究结果可为进一步理解硅片CMP的材料去除机理提供理论指导。

Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories

Distribution forms of abrasives in the chemical mechanical polishing (CMP) process are analyzed based on experimental results. Then the relationships between the wafer, the abrasive and the polishing pad are analyzed based on kinematics and contact mechanics. According to the track length of abrasives on the wafer surface, the relationships between the material removal rate and the polishing velocity are obtained. The analysis results are in accord with the experimental results. The conclusion provides a theoretical guide for further understanding the material removal mechanism of wafers in CMP.