首页 | 本学科首页   官方微博 | 高级检索  
     

a-Si/c-Si异质结结构太阳能电池设计分析
引用本文:林鸿生,马雷.a-Si/c-Si异质结结构太阳能电池设计分析[J].固体电子学研究与进展,2003,23(4):470-475,495.
作者姓名:林鸿生  马雷
作者单位:中国科学技术大学物理系,合肥,230026
基金项目:国家自然科学基金资助项目 (No.698760 2 4)
摘    要:通过应用 Scharfetter- Gum mel解法数值求解 Poisson方程 ,对热平衡态 a- Si/ c- Si异质结太阳能电池进行计算机数值模拟分析 ,着重阐述在 a- Si/ c- Si异质结太阳能电池中嵌入 i( a- Si:H)缓冲薄层的作用 ,指出采用嵌入 i( a- Si:H )缓冲薄层设计能有效增强光生载流子的传输与收集 ,从而提高 a- Si/ c- Si异质结太阳能电池的性能 ,同时还讨论 p+ ( a- Si:H)薄膜厚度和 p型掺杂浓度对光生载流子传输与收集的影响 ,而高强度光照射下模拟计算表明 ,a- Si/ c- Si异质结结构太阳能电池具有较高光稳定性

关 键 词:异质结太阳能电池  牛顿-拉普森解法  氢化非晶硅隙态密度  载流子收集
文章编号:1000-3819(2003)04-470-06

Analysis of the Design for a-Si/c-Si Heterojunction Structure Solar Cells
LIN Hongsheng MA Lei.Analysis of the Design for a-Si/c-Si Heterojunction Structure Solar Cells[J].Research & Progress of Solid State Electronics,2003,23(4):470-475,495.
Authors:LIN Hongsheng MA Lei
Abstract:A computer simulation model of a-Si/c-Si heterojunction solar cells at thermodynamic equilibrium using a Scharfetter-Gummel solution of Poisson's equ at ion has been developed. It stresses the role of the i(a-Si:H) buffer thin layer inserted into the a-Si/c-Si heterojunction solar cells. Due to th e use of designs of the insertion of an i(a-Si:H) buffer thin layer into p-n heterojunction, the collection and transport of photo-generated carrier s effectively increase, enhancing the performances of a-Si/c-Si heteroju nction solar cells. Also, the influences of thickness and p-type dopping co ncentration of p +(a-Si:H) thin films in a-Si/c-Si heterojunction sol ar cells on the collection and transport of photo-generated carriers are discusse d. Under the condition of prolonged light soaking, the simulation shows that a- Si/c-Si heterojuncion structure solar cell possesses high light stability .
Keywords:heterojunction solar cell  Newton-Raphson sol ution technique  density of states in a-Si:H  carrier collection
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号