Full flexible performance characterization of a feedback applied transistor with LNA applications

In this paper, the full flexible performance characterization of a transistor with series inductive/parallel capacitive feedback is carried out in terms of LNA applications. For this purpose, the input VSWR V_in–maximum available gain G_Tmax variations are constructed for a high technology low-noise transistor that is subject to the required noise figure F_req(f) ≥ F_min(f) along the device's operation band depending on the feedback. These V_in–G_Tmax variations result in the application of a design chart that indicates which value of feedback can be applied within which region of the operation band with the improvable trade-off between the V_in and output VSWR V_out for the Freq(f) ≥ Fmin(f). Following this, the optimum trade-off between V_in and V_out is made for the necessary operation frequency regions using the load impedance Z_L as an instrument with the predetermined source impedance Z_S. Finally, the LNA applications of a series inductive/parallel capacitive feedback applied transistor with the optimum V_in, V_out, and G_T subject to Freq(f) ≥ Fmin(f) ≥ are also presented as distributed across the entire bandwidth in the different operation bands. It can be concluded that this rigorous work will enable a designer to utilize the entire operation frequency band of transistor through using only a single series inductive/parallel capacitive feedback for the LNA designs of Freq(f) ≥ Fmin(f) with the optimum trade-offs among its performance measures.