A low temperature process for the reactive formation of Si3N4 layers on InSb

Standard chemical vapour deposition (CVD) processes for the deposition of silicon nitride films require working temperatures of 275°C or above which are liable to cause surface degradation of III–V semiconductors such as InSb. In this paper, a room temperature CVD process yielding Si₃N₄ layers with electrical characteristics that are comparable with those obtained by conventional processes is presented. The film density and the adherence to the InSb substrates could be significantly improved using a special electrode configuration and an in situ sputter etch prior to film deposition.