Preparation of In2O3 and tin-doped In2O3 films by a novel activated reactive evaporation technique

High quality films of In₂O₃ and tin-doped In₂O₃ were prepared by a novel activated reactive evaporation technique developed for use with resistively heated evaporation sources. Transparent conducting coatings of In₂O₃ have a sheet resistance of 80 Ω/□ with an optical transparency of more than 95% in the 0.4–1.6 μm wavelength range. Thin (0.4 μm) In₂O₃(Sn) films have a sheet resistance of 25 Ω/□ and an optical transparency as high as 99% at some wavelengths with an average transmission between 0.4 and 1.6 μm of 96%. Thicker films have a sheet resistance as low as 2.2 Ω/□. A comparison of the properties of In₂O₃(Sn) films with those of transparent conducting films produced by other techniques is made.