On the growth of cuprous oxide films |
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| Authors: | Ch Tsiranovits JG Antonopoulos J Stoemenos |
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| Affiliation: | Physics Department, University of Thessaloniki, Thessaloniki Greece |
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| Abstract: | {lcub;001}rcub; cuprous oxide (Cu2O) films were epitaxially grown. From the two methods which were used (the oxidation of copper films and the direct evaporation of bulk Cu2O) only the oxidation of copper yielded good single-crystal films. It was found that the optimum conditions were an oxidation temperature of 450°C with a partial pressure of oxygen of 2×10-5 Torr and, after oxidation, a further annealing at a pressure of 10-8 Torr. |
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