Electrical transport properties of polycrystalline HgTe films grown from mercury-rich HgTe

Measurements of the Hall coefficient and the d.c. conductivity were made on polycrystalline films prepared from mercury-rich HgTe. It was found that, in addition to grain boundary potential barrier scattering, the contribution of ionized impurity scattering is also quite significant. The effect of excess mercury in HgTe is to increase the mobility and to reduce compensating effects.