| 先进的工艺流程控制拓展电化学机械抛光工艺相容性 |
| |
| 摘 要： | 电化学机械抛光与化学机械抛光工艺相比提供了更大的控制能力,而一个多区的阴极允许对圆片内部均匀性进行精确的控制。马拉松式运行展现了在保持工艺规程同时具有扩展设备消耗性部件使用期限的能力。一种终点算法可以接受前馈控制数据调整一些方法并有效地减少圆片内部表面形貌的变异。
|
| 关 键 词： | 工艺控制 化学机械抛光 电化学机械抛光 片内均匀性 终点算法 |
Advanced Process Control Extends ECMP Process Consistency |
| |
| Authors: | Antoine Manens Paul Miller Eashwer Kollata Alain Duboust |
| |
| Affiliation: | Applied Materials Inc., Santa Clara, California;Applied Materials Inc., Santa Clara, California;Applied Materials Inc., Santa Clara, California;Applied Materials Inc., Santa Clara, California |
| |
| Abstract: | ECMP provides greater control capabilities compared to CMP processes, and a multizone cathode allows for precise control over within-wafer uniformities. Marathon runs show ability to extend the life of system consumable parts while maintaining process specifications. An end-point algorithm can accept feedforward data to adjust recipes and significantly reduce within-wafer topographic variation. |
| |
| Keywords: | Process control CMP ECMP Wthin-wafer uniformities End-point algorithm |
| 本文献已被 维普 万方数据 等数据库收录！ |
