| 热处理改善未掺杂LEC GaAs中EL2分布均匀性机理的研究 |
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| 引用本文： | 杨瑞霞.热处理改善未掺杂LEC GaAs中EL2分布均匀性机理的研究[J].固体电子学研究与进展,1994,14(1):85-90. |
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| 作者姓名： | 杨瑞霞 |
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| 作者单位： | 河北工学院 |
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| 摘 要： | 根据ＥＬ２分布的热处理行为和Ａｓ沉淀分布特征的实验结果，讨论了Ａｓ沉淀对ＥＬ２分布的影响和热处理改善ＥＬ２分布均匀性的机理。
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| 关 键 词： | EL2，热处理，分布，沉淀 |
Study on Improving Mechanism of Uniformity of EL2Distribution in Undoped LEC SI GaAs by Heat Treatment |
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| Yang Ruixia.Study on Improving Mechanism of Uniformity of EL2Distribution in Undoped LEC SI GaAs by Heat Treatment[J].Research & Progress of Solid State Electronics,1994,14(1):85-90. |
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| Authors: | Yang Ruixia |
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| Abstract: | In this paper, the improving mechanism of the uniformity in EL2distribution by heat treatment and the effect of As precipitate on EL2 distributionare discussed on the basis of the experimental results. |
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| Keywords: | EL2 Heat Treatment Distribution Precipitate |
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