| 宽带W波段低噪声放大器的设计与制作 |
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| 引用本文： | 刘永强,曾志,刘如青,韩丽华,栾鹏,蔡树军.宽带W波段低噪声放大器的设计与制作[J].半导体技术,2009,34(6). |
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| 作者姓名： | 刘永强 曾志 刘如青 韩丽华 栾鹏 蔡树军 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051 |
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| 摘 要： | 基于未来低功耗毫米波接收前端的应用,采用InP HEMT工艺实现了一种W波段宽带低噪声放大器.该放大器采用边缘耦合线用于级间的隔离,扇形短截线用于RF旁路,偏置网络采用薄膜电阻和扇形短截线以保持放大器的稳定性.采用3 mm噪声测试系统对单片进行在片测试.测试结果显示在80～102 GHz,噪声系数小于5 dB,相关增益大于19 dB.五级电路的栅、漏分别连在一起方便使用,芯片面积3.6 mm×1.7 mm,功耗30 mW.
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| 关 键 词： | 磷化铟 高电子迁移率晶体管 低噪声放大器 W波段 毫米波接收机 边缘耦合线 |
Design and Fabrication of a W-Band Wide-Band Low Noise Amplifier |
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| Liu Yongqiang,Zeng Zhi,Liu Ruqing,Han Lihua,Luan Peng,Cai Shujun.Design and Fabrication of a W-Band Wide-Band Low Noise Amplifier[J].Semiconductor Technology,2009,34(6). |
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| Authors: | Liu Yongqiang Zeng Zhi Liu Ruqing Han Lihua Luan Peng Cai Shujun |
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| Affiliation: | The 13th Research Institute;CETC;Shijiazhuang 050051;China |
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| Abstract: | A W-band wide-band low noise amplifier based on InP HEMT technology was developed for the application of low power millimeter-wave receiver front-end.Edge coupled lines were used for DC blocking and radial stubs were employed for RF bypass.TFR and radial stubs were used in the bias network to ensure the stability.This amplifier was measured by an on-wafer 3 mm noise measurement system and a noise figure (NF) of less than 5 dB with an associated gain of greater than 19 dB from 80 to 102 GHz were achieved.The... |
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| Keywords: | InP HEMT LNA W-band millimeter-wave receiver edge coupled line |
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