| 氨化Si基Ga2O3/V膜制备GaN纳米线 |
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| 引用本文： | 杨兆柱,薛成山,庄慧照,王公堂,陈金华,李 红,秦丽霞,王邹平.氨化Si基Ga2O3/V膜制备GaN纳米线[J].稀有金属材料与工程,2009,38(3):377-379. |
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| 作者姓名： | 杨兆柱 薛成山 庄慧照 王公堂 陈金华 李 红 秦丽霞 王邹平 |
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| 作者单位： | 山东师范大学,山东,济南,250014 |
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| 基金项目： | Key Research Program of the National Natural Science Foundation of China，国家自然科学基金 |
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| 摘 要： | 氨化硅基钒应变层氧化镓膜制备了大量氮化镓纳米线,X射线衍射、扫描电子显微镜和透射电子显微镜观察发现,纳米线具有十分光滑且干净的表面,其直径为20～60 nm左右,长度达到十几微米.高分辨透射电子显微镜和选区电子衍射分析结果表明,制备的氮化稼纳米线为六方纤锌矿结构.光致发光谱显示制备的氮化稼纳米线有良好的发光特性.另外,简单讨论了氮化稼纳米线的生长机制.
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| 关 键 词： | 磁控溅射 氮化镓 纳米线 光致发光 |
| 收稿时间： | 3/3/2008 12:00:00 AM |
Synthesis of Large-scale GaN Nanowires by Ammoniating Ga2O3/V Films |
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| Yang Zhaozhu,Xue Chengshan,Zhuang Huizhao,Wang Gongtang,Chen Jinhu,Li Hong,Qin Lixia and Wang Zouping.Synthesis of Large-scale GaN Nanowires by Ammoniating Ga2O3/V Films[J].Rare Metal Materials and Engineering,2009,38(3):377-379. |
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| Authors: | Yang Zhaozhu Xue Chengshan Zhuang Huizhao Wang Gongtang Chen Jinhu Li Hong Qin Lixia and Wang Zouping |
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| Abstract: | Large-scale GaN nanowires were synthesized on Si(111) substrates through ammoniating Ga2O3/V films. The as-grown products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results reveal that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 20 nm to 60 nm and lengths of about several tens of micrometers. The results of HRTEM and selected-area electron diffraction (SAED) show that the nanowires ... |
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| Keywords: | magnetron sputtering GaN nanowires:photoluminescence |
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