Novel positive-tone thick photoresist for high aspect ratio microsystem technology |
| |
| Authors: | G-W Hsieh Y-S Hsieh C-R Yang Y-D Lee |
| |
| Affiliation: | (1) Department of Chemical Engineering, National Tsing-Hua University, Hsinchu, 30043 Taiwan, Republic of China E-mail: ydlee@che.nthu.edu.tw, TW;(2) Department of Industrial Education, National Taiwan Normal University, Taipei 106, Taiwan, Republic of China, TW |
| |
| Abstract: | A methacrylate copolymer combining chemically amplified concept and casting technique was developed as a novel thick photoresist
for the UV-LIGA process. Photoresist layers up to 500 μm in thickness can be fabricated easily. Microstructures fabricated
by the novel thick photoresist were demonstrated. At present, the ring-shape microstructures with 150 μm tall and 15 μm wide
have been realized and the calculated aspect ratio is 10.
Received: 10 August 2001/Accepted: 24 September 2001 |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
