Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors |
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Authors: | Martin Sandn B Gunnar Malm Jan V Grahn Mikael
stling |
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Affiliation: | a Department of Electronics, Royal Institute of Technology (KTH), P.O. Box Electrum 229, SE-164 40 Kista-Stockholm, Sweden |
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Abstract: | The low-frequency noise dependence on lateral design parameters was investigated for SiGe heterojunction bipolar transistors fabricated by differential epitaxy. The low-frequency noise was found to vary substantially as a function of the extrinsic base design. The dominant noise sources were located either at the interface between the polycrystalline and epitaxial Si/SiGe base, in the epitaxial Si/SiGe base link region, in the base–emitter depletion region, or at the thin SiO2 interface layer between the polysilicon and monosilicon emitter. Boron was found to passivate interfacial traps, acting as low-frequency noise sources. Generation–recombination noise with a strong dependence on the lateral electrical field was observed for some of the designs. |
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