Effect of SiO2/Si interface roughness on gate current |
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Authors: | Ling-Feng Mao Yao Yang Jian-Lin Wei Heqiu Zhang Ming-Zhen Xu Chang-Hua Tan |
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Affiliation: | a Institute of Microelectronics, Peking University, Beijing 100871, China;b Department of Applied Physics, Xidian University, Xian 710071, China |
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Abstract: | In many theoretical investigations of the electric-tunnel effect through an ultrathin oxide in metal-oxide-semiconductor (MOS) structure, it is commonly assumed that the oxide is of uniform thickness. One example of nonuniformity in oxides is interface roughness. Interface roughness effects on direct tunneling current in ultrathin MOS structures are investigated theoretically in this article. The roughness at SiO2/Si interface is described in terms of Gauss distribution. It is shown that the transmission coefficient increases with root-mean-square (rms) roughness increasing, and the effect of rms roughness on the direct tunneling current decreases with the applied voltage increasing and increases with rms roughness increasing. |
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