Threshold energies in the light emission characteristics of silicon MOS tunnel diodes |
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| Authors: | N Asli MI Vexler AF Shulekin PD Yoder IV Grekhov P Seegebrecht |
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| Affiliation: | a Lehrstuhl für Halbleitertechnik, Christian-Albrechts-Universität, Kaiserstrasse 2, 24143 Kiel, Germany;b A.F. Ioffe Physicotechnical Institute, 194021 St.-Petersburg, Russia;c Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974, USA |
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| Abstract: | Hot electron luminescence of MOS tunnel structures with sub-3 nm oxide layer on p-Si is experimentally studied. Radiation spectra are shown to exhibit thresholds whose positions depend on the initial energy E of injected electrons. Simultaneously, a threshold-like increase of the light intensity at a selected wavelength as a function of E is revealed, and attributed to the onset of different luminescence mechanisms. |
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