Planar TJS lasers fabricated in semi-insulating GaAs substrates for optoelectronic integrated circuits |
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| Authors: | Ishii M Kamon K Shimazu M Mihara M Kumabe H Isshiki K |
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| Affiliation: | Optoelectronics Joint Research Laboratory, Kawasaki, Japan; |
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| Abstract: | TJS lasers with a planar structure were fabricted by growing GaAs-AlGaAs double heterstructures in reverse-mesa-etched shapes in semi-insulting GaAs substrates. Continuous single-mode operation was achieved at temperatures up to 110°C. The minimum threshold current was 25 mA at 25°C. |
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