| 利用热退火法从非晶硅薄膜中生长纳米硅粒 |
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| 引用本文： | 薛清.利用热退火法从非晶硅薄膜中生长纳米硅粒[J].量子电子学报,2006,23(4):565-568. |
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| 作者姓名： | 薛清 |
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| 作者单位： | 淮海工学院数理科学系,江苏,连云港,222005 |
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| 摘 要： | 报道了一种从氢化非晶硅薄膜中生长纳米硅粒的方法.氢化非晶硅薄膜经过不同条件的热退火处理后,用拉曼散射和X射线衍射技术对样品进行了分析.实验结果表明:在快速升温条件下所形成的nc-Si在薄膜中的分布是随机均匀的,直径在1.6～15 nm范围内,硅粒大小随退火过程中升温快慢而变化.
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| 关 键 词： | 光电子学 纳米硅 快速热退火 拉曼散射 |
| 文章编号： | 1007-5461（2006）04-0565-04 |
| 收稿时间： | 2005-04-11 |
| 修稿时间： | 2005-05-19 |
NC-Si clusters formed in thermally annealed A-Si:H films |
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| XUE Qing.NC-Si clusters formed in thermally annealed A-Si:H films[J].Chinese Journal of Quantum Electronics,2006,23(4):565-568. |
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| Authors: | XUE Qing |
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| Abstract: | Nanocrystalline Si clusters can be formed in thermally annealed a-Si: H films. Using different characterizing techniques such as micro-Raman scattering, and X-ray diffraction, we have found nc-Si clusters distribute uniformly in the amorphous matrix of the annealed films with typical sizes in the range of 1.6-15 nm in diameter. The sizes of these silicon particles change sensitively with the temperature ramp rate applied during thermal annealing. |
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| Keywords: | optoelectronics quantum optics nanocrystalline silicon rapid thermal annealing Raman scattering |
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