| 湍流型CVD反应器中生长晶体Si的模拟与分析 |
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| 引用本文： | 魏家星,徐睿,禹燕飞,侯金亮,李昌烽.湍流型CVD反应器中生长晶体Si的模拟与分析[J].半导体学报,2014,35(8):083002-5. |
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| 作者姓名： | 魏家星 徐睿 禹燕飞 侯金亮 李昌烽 |
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| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目）；教育部科学技术研究重点项目 |
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| 摘 要： | Numerical simulation, based on simple reaction models that manifest the deposition quality of silicon from silane, was undertaken to investigate the horizontal reactor, with longitudinal and transversal aspect ratios of 10 and 4, respectively. The effects of Rayleigh （Ra） and Reynolds （Re） numbers on the Si deposition rate in these turbulent-type reactors are discussed. The results show that the time-averaged deposition rate is fairly uniform and fast, although the instantaneous deposition is non-uniform in these turbulent reactors. In addition, the increase of the Re number within a certain range can compensate for the path loss of the reactant and obviously enhance the downstream deposition rate, but deteriorate the transverse distribution of the deposition.
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| 关 键 词： | 卧式反应器 沉积速率 数值模拟 CVD Si 反应模式 时间平均 路径损耗 |
| 修稿时间： | 3/6/2014 12:00:00 AM |
Simulation and analysis of Si deposition in turbulent CVD reactors |
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| Wei Jiaxing,Xu Rui,Yu Yanfei,Hou Jinliang and Li Changfeng.Simulation and analysis of Si deposition in turbulent CVD reactors[J].Chinese Journal of Semiconductors,2014,35(8):083002-5. |
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| Authors: | Wei Jiaxing Xu Rui Yu Yanfei Hou Jinliang and Li Changfeng |
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| Affiliation: | School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China;School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China;School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China;School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China;School of Energy and Power Engineering, Jiangsu University, Zhenjiang 212013, China |
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| Abstract: | Numerical simulation, based on simple reaction models that manifest the deposition quality of silicon from silane, was undertaken to investigate the horizontal reactor, with longitudinal and transversal aspect ratios of 10 and 4, respectively. The effects of Rayleigh (Ra) and Reynolds (Re) numbers on the Si deposition rate in these turbulent-type reactors are discussed. The results show that the time-averaged deposition rate is fairly uniform and fast, although the instantaneous deposition is non-uniform in these turbulent reactors. In addition, the increase of the Re number within a certain range can compensate for the path loss of the reactant and obviously enhance the downstream deposition rate, but deteriorate the transverse distribution of the deposition. |
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| Keywords: | chemical vapor deposition turbulence deposition rate natural convection |
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