Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy |
| |
Authors: | T Aoki Y Chang G Badano J Zhao C Grein S Sivananthan David J Smith |
| |
Affiliation: | (1) Center for Solid State Science, Arizona State University, 85287 Tempe, AZ;(2) Microphysics Laboratory, Physics Department, University of Illinois, 60607 Chicago, IL;(3) Department of Physics and Astronomy, Arizona State University, 85287 Tempe, AZ |
| |
Abstract: | Surface-void defects observed in Hg1−xCdxTe (x ∼ 0.2–0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron
microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient
growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and
they were associated with the local development of polycrystalline morphology. High-resolution observations established the
occurrence of finely spaced HgCdTe/Te intergrowths with semicoherent and incoherent grain boundaries, as well as small HgCdTe
inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used
to investigate this type of defect. |
| |
Keywords: | HgCdTe surface-crater defects high-resolution electron microscopy molecular-beam epitaxy (MBE) |
本文献已被 SpringerLink 等数据库收录! |
|