首页 | 本学科首页   官方微博 | 高级检索  
     


Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy
Authors:T Aoki  Y Chang  G Badano  J Zhao  C Grein  S Sivananthan  David J Smith
Affiliation:(1) Center for Solid State Science, Arizona State University, 85287 Tempe, AZ;(2) Microphysics Laboratory, Physics Department, University of Illinois, 60607 Chicago, IL;(3) Department of Physics and Astronomy, Arizona State University, 85287 Tempe, AZ
Abstract:Surface-void defects observed in Hg1−xCdxTe (x ∼ 0.2–0.4) alloys grown by molecular-beam epitaxy (MBE) have been investigated using scanning and high-resolution transmission-electron microscopy (HRTEM) as well as atomic force microscopy (AFM). These surface craters, which have been attributed to Hg-deficient growth conditions, were found to originate primarily within the HgCdTe epilayer, rather than at the CdZnTe substrate, and they were associated with the local development of polycrystalline morphology. High-resolution observations established the occurrence of finely spaced HgCdTe/Te intergrowths with semicoherent and incoherent grain boundaries, as well as small HgCdTe inclusions embedded within the Te grains. This study is the first time that high-resolution electron microscopy has been used to investigate this type of defect.
Keywords:HgCdTe  surface-crater defects  high-resolution electron microscopy  molecular-beam epitaxy (MBE)
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号