Electronic structure and thermoelectric power of CeNi4Si

The studies of the thermoelectric power and band structure calculations for CeNi₄Si are reported. These studied are supported by magnetic susceptibility, electrical resistivity, specific heat and X-ray photoemission spectroscopy measurements. CeNi₄Si is paramagnetic down to 2 K and follows the Curie–Weiss law with μ_eff = 0.52μ_B/f.u. and the paramagnetic Curie temperature θ_P = −2 K. This effective paramagnetic moment is lower than the free Ce³⁺ value. The obtained values for the f occupancy n_f and for the coupling Δ of the f level with the conduction states are in good agreement with the values found for mixed valence compounds. Below the Fermi energy the total density of states contains mainly the d states of Ni atoms. The narrow peaks of the f states of Ce atoms were found above the Fermi level. CeNi₄Si is characterized by γ = 16 mJ mol⁻¹ K⁻² and θ_D = 335 K.