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Dielectric properties of CaCu3Ti4−xCoxO12 (x = 0.10, 0.20, and 0.30) synthesized by semi-wet route
Authors:Alok Kumar Rai  K.D. Mandal  D. Kumar  Om Parkash
Affiliation:1. Department of Applied Chemistry, Institute of Technology, Banaras Hindu University, Varanasi 221005 (U.P.), India;2. Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, Varanasi 221005 (U.P.), India
Abstract:Undoped CaCu3Ti4O12 and cobalt doped CaCu3Ti4−xCoxO12 (CCTCO) with x = 0.10, 0.20 and 0.30 were prepared by semi-wet route for the first time using solid TiO2 powder and metal nitrate solutions. XRD analysis confirmed the formation of single-phase material in the samples sintered at 900 °C for 6 h. Structure does not change on doping with cobalt and it remains cubic in all the three compositions studied. Lattice parameter increases slightly with cobalt doping. SEM micrographs of the CaCu3Ti4−xCoxO12 samples show that the grain size is in the range of 2–8 μm for these samples. EDX studies show the percentage of elements along with the grain and grain boundary, which confirm the rich phase of copper oxide at grain boundaries. Dielectric properties have been measured as a function of temperature and frequency.
Keywords:Ceramics   Chemical synthesis   Electron microscopy   Dielectric properties
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