ZrTe5的太赫兹辐射研究

为了研究层状ZrTe₅（五碲化锆）在飞秒脉冲激发下的超快瞬态太赫兹辐射，利用太赫兹时域反射系统对其进行了测试分析。通过分析层状ZrTe₅太赫兹电场幅度与飞秒激光泵浦功率及泵浦脉冲偏振关系，获得了层状ZrTe₅产生太赫兹辐射的主要机理。同时还对比了相同泵浦条件下层状ZrTe₅和本征GaAs（砷化镓）太赫兹辐射强度。研究表明，层状ZrTe₅具有带隙结构窄、吸收深度浅、光生电子剩余能量较大、载流子迁移率较高等优势，在太赫兹产生方面比传统半导体具有更好的性能。该研究可为发现高效、高度集成化太赫兹辐射源提供参考。

Terahertz radiation study of ZrTe5

In order to study transient terahertz radiation from layered ZrTe₅ (zirconium pentatelluride) excited by femtosecond pulses, terahertz time domain system was used to test and analyze the terahertz emission. By analyzing the relationship between terahertz electric field of layered ZrTe₅ and intensity/polarization of femtosecond laser pulse, it was obtained that the main mechanism of terahertz radiation generation by layered ZrTe₅. At the same time, the terahertz radiation intensity of layered ZrTe₅ and intrinsic GaAs (gallium arsenide) under the same pumping conditions was also compared. Studies have shown that the layered ZrTe₅ has narrow band gap structure, shallow absorption depth, larger residual energy of photogenerated electrons and higher carrier mobility, which has better performance than traditional semiconductors in terms of terahertz generation. The experimental research provides a reference for the discovery of efficient and highly integrated terahertz radiation sources.