一种MEMS体声波硅谐振器的设计

设计了一种基于SOI衬底工艺的MEMS体声波硅谐振器及其制造方法。利用有限元分析软件对该谐振器进行了模态分析，并针对提高品质因数Q，研究了其损耗机制。结果表明：谐振频率可达108MHz，且取决于硅材料特性和器件尺寸，而品质因数则决定于支撑损耗。最后，从振动模态和传输线模型角度出发，提出了减少支撑损耗提高Q值的可行性方法，包括将支撑梁放置在振动节点处、梁长度设置为弹性波长的1/4及在衬底端设置声波反射器。

A Design for MEMS Silicon Bulk Acoustic Wave Resonator

A MEMS silicon bulk acoustic wave resonator based on SOI substrate and its fabrication process are presented. The resonator is simulated by finite element analysis software, and the loss mechanisms are analyzed in order to improving quality factor (Q). The results indicate that the resonance frequency is 108MHz, and depends on silicon material properties and device size, while Q depends on the support loss. Finally, from the perspective of vibration mode and transmission line model, some feasible methods for reducing support loss are put forward, including placing the support beams at the nodal points , making the beam length equal to a quarter of the elastic wavelength, and setting acoustic reflectors at the substrate.