| 耗散功率与环境温度对功率VDMOS热阻的影响分析 |
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| 引用本文： | 董晨曦,王立新. 耗散功率与环境温度对功率VDMOS热阻的影响分析[J]. 电子器件, 2013, 36(6) |
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| 作者姓名： | 董晨曦 王立新 |
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| 作者单位： | 中国科学院微电子研究所 |
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| 摘 要： | 运用电学测试法，以两款不同封装类型功率VDMOS为实验对象，考察了耗散功率和环境温度对器件稳态热阻值的影响。结果表明：器件热阻值不是一个恒定不变的常量，由于电流拥挤效应，材料导热系数等条件的改变，它会随耗散功率及环境温度的增大而增大。该研究加深了对功率器件热阻理论的认识，为功率VDMOS的热特性评估提供了可靠的依据。
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| 关 键 词： | 功率器件；热阻；电学法；耗散功率；可靠性 |
The Influence of Power dissipation and Air environment on Thermal resistance of Power VDMOS |
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| Abstract: | Two types of power VDMOS devices are taken as an example, the electrical method is employed to analyze the influence of power dissipation and air environment on steady-state thermal resistance. It shows that, the thermal resistance of power devices is not a constant, it will vary with both power dissipation and air environment as a result of the current crowding phenomenon and the change of thermal conductivity of materials. The study deepens the understanding of the theory of thermal resistance and provided a reliable basis for the evaluation of thermal characteristics of power VDMOS devices. |
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| Keywords: | Power device Thermal resistance Electrical method Power dissipation Reliability |
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