| GaAlAs红外发光二极管低频噪声检测方法 |
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| 引用本文： | 熊建国,黄贻培,杨代强,陈志高. GaAlAs红外发光二极管低频噪声检测方法[J]. 电子器件, 2015, 38(6) |
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| 作者姓名： | 熊建国 黄贻培 杨代强 陈志高 |
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| 作者单位： | 中国地震局地震研究所 |
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| 基金项目： | 中国地震局地震研究所基金，重庆市高等教育教学改革研究重点项目 |
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| 摘 要： | 通过分析GaAlAs红外发光二极管(IRED)的低频噪声产生机理及特性，建立了GaAlAs IRED的噪声模型，设计了一套低频噪声测试系统，通过该系统测量得到了GaAlAs IRED的低频噪声。实验表明，该方法能准确的测量GaAlAs IRED的低频噪声，发现其低频噪声主要表现为1/f噪声，得到与噪声模型一致的结果。该研究为GaAlAs IRLED可靠性的噪声表征提供了实验基础与理论依据。
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| 关 键 词： | 低频噪声；红外发光二极管；噪声模型；氧化层陷阱 |
Method of low-frequency noise measurement for GaAlAs IREDs |
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| Abstract: | By analyzing the low frequency noise mechanism and characteristics of the GaAlAs infrared light-emitting diode (IRED),the paper establishes the noise model of GaAlAs IRED, designs a set of measurement system of the low frequency noise, and obtains low-frequency noise of GaAlAs IRED by the measurement system. Experimental results show that the method can accurately measure low-frequency noise of GaAlAs IRED, and find out that the low-frequency noise is mainly for 1/f noise. The noise model is consistent with the results. The work done above provides an experimental and theoretical basis for low-frequency noise to be used in characterizing reliability of GaAlAs IREDs. |
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