GaInAsP/InP surface emitting injection laser with a ring electrode |
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| Authors: | Uchiyama S. Iga K. |
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| Affiliation: | Tokyo Institute of Technology, Midoriku, Yokohama, Japan; |
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| Abstract: | -A GaInAsP/InP surface emitting injection laser (lambda = 1.2 mum) with a ring electrode has been fabricated. In this structure we separated the reflecting mirror from the p-side electrode in order to increase the reflectivity. Threshold current was 90 mA at 77 K and the operating temperature has been raised up to -85°C. The cavity length was 7.5 μm and single longitudinal mode operation was achieved. |
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