金属铜辅助化学刻蚀对金刚线切割多晶硅的制绒

针对金刚线切割多晶硅制绒后硅片反射率偏高且切割纹难以去除等问题,采用酸性湿法刻蚀预处理再结合低成本的金属铜辅助化学刻蚀成功的实现了金刚线切割多晶硅片表面制绒。研究结果表明,随着酸腐蚀时间的增加,金刚线切割多晶硅片表面切割纹、粗糙度得到有效改善。倒金字塔结构的引入能够有效地降低硅片表面的反射率。当酸洗预处理时间为5 min,金属铜辅助化学刻蚀时间为15 min时,样品表面倒金字塔结构最均匀,且在300~1 100 nm波长范围内,获得最低平均反射率3.32%。同时优越的减反效果和去除切割纹能力,使得制绒后金刚线切割多晶硅片有望实现高效率的太阳能电池。

Cu-assisted Chemical Etching of Diamond Wire Sawn Multicrystalline Silicon Wafers for Texturing

In order to improve the poor anti-reflectivity and remove the stubborn saw marks on diamond wire sawn multicrystalline silicon wafers, a method combining acidic wet etching pre-treatment and low-cost copper assisted chemical etching was proposed for successfully texturing of diamond wire sawn multicrystalline silicon wafers. The research results show that the surface saw marks and roughness dramatically decrease with increasing etching time. The introduction of the inverted pyramid structure can effectively reduce the reflectivity of the silicon wafer surface. When the pre-treatment time is 5 min, and the copper assisted chemical etching time is 15 min, the resulting inverted pyramid structure is the most uniform, and the etched sample shows the lowest average reflectivity of 3.32% in the wavelength range of 300-1 100 nm. The superior anti-reflection performance and excellent saw marks elimination ability show that the textured diamond wire sawn multicrystalline silicon wafers has a huge potential application to high-efficiency solar cells.