Reducing dielectric loss in Na0.5Bi0.5TiO3 based high temperature capacitor material |
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Authors: | An-Phuc Hoang Sebastian Steiner Fan Yang Linhao Li Derek C Sinclair Till Frömling |
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Affiliation: | 1. Department of Materials and Earth Science, Technical University of Darmstadt, FB Nichtmetallisch-Anorganische Werkstoffe, Alarich-Weiss-Straße 2, D-64287 Darmstadt, Germany;2. Department of Materials Science and Engineering, University of Sheffield, Sir Robert Hadfield Building, Mappin Street, Sheffield, S1 3JD, United Kingdom |
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Abstract: | The demand for capacitors exhibiting low sensitivity towards temperature changes and high power peaks has increased significantly. Recently, Na0.5Bi0.5TiO3 (NBT) based ceramics became excellent candidates for such extreme temperature capacitors. The dielectric loss of these materials is, however, difficult to control because of the complex defect chemistry of NBT based ceramics. Therefore, it is the limiting factor for high temperature applications. In this work, we present a strategy to increase the upper temperature limit for low dielectric loss. The addition of BiAlO3 to Na0.5Bi0.5TiO3-BaTiO3-CaZrO3 reduces the loss and sensitivity towards Bi evaporation during synthesis. For unmodified samples, the relative permittivity (εr = 581, at 1 kHz) varies less than 15 %, while the dielectric loss stays below 0.02 between -68 and 368 °C. With the addition of BiAlO3, the temperature range of low loss extends from -68 to 391 °C at even higher permittivity (εr = 628, at 1 kHz). |
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Keywords: | High temperature capacitor defect chemistry dielectric loss lead-free NBT |
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