| 掺杂TGS晶体抑制杂晶方法的研究 |
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| 引用本文： | 陈连发,丁斌,关昶,强亮生.掺杂TGS晶体抑制杂晶方法的研究[J].哈尔滨工业大学学报,2009(7):256-258. |
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| 作者姓名： | 陈连发 丁斌 关昶 强亮生 |
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| 作者单位： | 吉林化工学院化工系;哈尔滨工业大学应用化学系 |
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| 摘 要： | 首次采用二次下晶法,有效地抑制杂晶的出现,加快了晶体生长速率.同时对晶体生长过程中出现的一些问题进行了探讨.将掺杂晶体生长溶液的pH值控制在1~4,可改变掺杂晶体的结晶习性.
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| 关 键 词： | TGS晶体 二次下晶法 抑制杂晶 pH值 |
Method to restains the emergence of foreign crystals by doped TGS crystals |
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| CHEN Lian-fa,DING Bin,GUAN Chang,QIANG Liang-sheng.Method to restains the emergence of foreign crystals by doped TGS crystals[J].Journal of Harbin Institute of Technology,2009(7):256-258. |
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| Authors: | CHEN Lian-fa DING Bin GUAN Chang QIANG Liang-sheng |
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| Affiliation: | 1.Dept.of Chemical Engineering,Jilin Institute of Chemical Technology,Jilin 132022,China;2.Dept.of Applied Chemistry,Harbin Institute of Technology,Harbin 150001,China) |
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| Abstract: | The emergence of foreign crystals was restrained effectively by twice seedling method which accelerated the growth velocity of crystals.Problems in the growth process of crystal were analysed.The growth habit of doped crystals could be changed by controlling the pH value of the growth solution in the rounge of 1~4. |
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| Keywords: | TGS crystal twice seedling method restraint for foreign crystals pH value |
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