Improved setup for studying the low-frequency noise in semiconductor devices and structures

A setup is described for measuring the noise power density spectra of optical radiation detectors at frequencies from 1 to 10⁵ GHz in the detector and background temperature range from 80 to 500 K. Results obtained with lead sulfide photoresistors and silicon and indium antimonide photodiodes are presented. Translated from Izmertel'naya Tekhnika, No. 1, pp. 57–61, January, 1997.