Neutralization of electrically active aluminum in recrystallized silicon-on-sapphire films |
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Authors: | I Golecki R L Maddox K M Stika |
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Affiliation: | (1) Rockwell International Corporation, Microelectronics Research and Development Center Defense Electronics Operations, 3370 Miraloma Avenue, 92803 Anaheim, CA;(2) Jet Propulsion Laboratory, 4800 Oak Grove Drive, 91109 Pasadena, CA;(3) California Institute of Technology, Mail Code 116-81, 91125 Pasadena, CA;(4) Present address: Polymer Products Department, 323/113, E.I. du Pont de Nemours S Co., 19898 Wilmington, DE |
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Abstract: | We report the effect of steam oxidation at 875° C on the electrical resistivity, crystalline quality (measured by ion channeling),
and Al concentration (measured by secondary ion mass spectrometry) in 0.25 μm thick, Si-implanted and recrystallized, Si-on-sapphire
films. After a deep Si implantation (180 keV, 1.4×l015 Si/cm2) at room temperature, and solid-phase epitaxial regrowth from the non-amorphized, 0.03 μm thick surface region, the initially
undoped SOS films become doped p-type, and their resistivity decreases from (1−5)xl014 ficm to 0.5 Ωcm. The doping is due to electrically active Al, released from the A12O3 by the Si implantation, and present in the recrystallized films at a concentration of ≃2×l016 Al/cm3 . After a 75 min steam oxidation at 875 °C, which consumes 0.06 Μm of Si, the resistivity of the recrystallized films increases
to over 40 Ωcm, but the Al concentration is unchanged. The oxidation also uncovers higher quality material below the non-recrystallized
surface layer. A semi-quantitative model is proposed to explain the electrical data, based on the diffusion of oxygen from
the Si/SiO2 interface into the SOS film during oxidation, and the formation of Al-O-Si neutral complexes. Data on the stability of the
high-resistivity films against high-temperature annealing or re-amorphization and annealing is given. |
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Keywords: | Si-on-sapphire Si implantation recrystallization Al doping complexes — electrically neutral |
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