Bipolar operation of power junction field effect transistors |
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Authors: | Baliga B.Jayant |
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Affiliation: | General Electric Company, Corporate Research & Development Center, Schenectady, USA; |
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Abstract: | Bipolar-mode power j.f.e.t. operation is demonstrated to result in a significant improvement in the on resistance, especially for high-voltage devices. Theoretical analysis and experimental data show that the on resistance varies inversely as the square root of the gate current. High-speed switching in this mode has also been achieved. |
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