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Bipolar operation of power junction field effect transistors
Authors:Baliga   B.Jayant
Affiliation:General Electric Company, Corporate Research & Development Center, Schenectady, USA;
Abstract:Bipolar-mode power j.f.e.t. operation is demonstrated to result in a significant improvement in the on resistance, especially for high-voltage devices. Theoretical analysis and experimental data show that the on resistance varies inversely as the square root of the gate current. High-speed switching in this mode has also been achieved.
Keywords:
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