Bi and Te thin films synthesized by galvanic displacement from acidic nitric baths |
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Authors: | Chong Hyun Chang Yong-Ho Choa Deok-Yong Park Nosang V. Myung |
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Affiliation: | a Department of Chemical and Environmental Engineering, University of California-Riverside, Riverside, CA 92521, USA b Division of Materials and Chemical Engineering, Hanyang University, Ansan 426-791, Republic of Korea c Department of Applied Materials Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea |
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Abstract: | Bismuth (Bi) and tellurium (Te) thin films were formed by galvanic displacement of different sacrificial iron group thin films [i.e. nickel (Ni), cobalt (Co) and iron (Fe)] where the formation was systematically investigated by monitoring the change of open circuit potential (OCP), surface morphology and microstructure. The surface morphologies and crystal structures of galvanically displaced Bi or Te thin films strongly depended on the type and thickness of the sacrificial materials. Continuous Bi thin films were successfully deposited with the sacrificial Co. However, dendrites and nanoplatelets were formed from the Ni and Fe thin films. Te thin films were synthesized with all the three sacrificial thin films. Chemical dissolution rate of the sacrificial thin films and mixed potential strongly influenced formation of Bi or Te thin films. |
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Keywords: | Galvanic displacement Electroless deposition Bismuth Tellurium Thermoelectric materials |
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