Thermal hysteresis in ferrite memory cores |
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Authors: | Sacks I. |
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Affiliation: | Cornell Aeronautical Laboratory, Inc., Buffalo, N.Y., USA; |
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Abstract: | The effects of different writing and reading temperatures on the switching voltage waveform, permeability, and flux state of standard nickel-copper-manganese and copper-manganese ferrite memory cores have been investigated over a temperature range of 0 to 70°C. These temperatures are well below the Curie temperatures of the materials being tested. It has been found that writing at a higher temperature than the read temperature leads to increased low temperature voltage switching thresholds, higher low frequency (<40 MHz) permeabilities, lower high frequency (>40 MHz) permeabilities, and flux states almost equal to the equilibrium value for the lower temperature. Read current pulse rise time and duration have been found to have no effect on the increase in threshold with temperature. Externally produced stresses have been used to simulate the effects of temperature changes on the core. |
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