GaAs-based modulation-doped quantum-well infrared photodetectors for single- and two-color detection in 3-5 /spl mu/m

Double-barrier quantum-well infrared photodetectors are promising for operation in the midinfrared region. In this paper, we present a series of novel molecular beam epitaxy (MBE)-grown devices based on modulation-doped (MD) AlGaAs-AlAs-GaAs structures that exhibit a remarkable responsivity at zero bias (0.05 A/W) at 4.6 /spl mu/m. Since the photovoltaic properties are strongly dependent on the symmetry of the potential profile, we have systematically varied the position of the dopant in the barriers for a series of single-color detectors. Low-temperature photocurrent spectra and current-voltage (I-V) characteristics (in the dark and under illumination) show that the location of the dopant is a relevant design parameter, due to its role in the photovoltaic behavior (i.e., the presence or absence of zero bias signal). The performance of the MD devices is compared with that of a detector with doping in the center of the well and otherwise the same structure. In particular, the responsivity and detectivity seem to be higher for the MD detectors than for well-doped samples, especially when the dopant is located in the barrier closest to the substrate. Therefore, we have chosen that MD dopant profile when designing and growing, to our knowledge, the first 3-5 /spl mu/m two-color detector, with simultaneous detection at 3.8 and 4.4 /spl mu/m.