低能Xe离子辐照在Al表面上的光辐射研究

本文测量了200~550 keV的Xe10+离子轰击高纯度（9999%）Al表面诱发的溅射Al原子的光发射，研究了Al Ⅰ 30810、30914、39452、39628 nm光谱线强度比值和光子产额随入射离子能量的变化趋势。在本实验能量范围内，辐射光谱线强度比值随入射离子能量增加几乎不变，而发射谱线的光子产额随入射离子能量的增加呈现出不同趋势：入射离子能量为450 keV时，光子产额出现极大值，入射离子能量超过450 keV时，光子产额随能量的增加而减少，其变化趋势与核阻止本领随能量增加的变化没有出现类同的变化特征。结合核阻止和电子阻止效应对实验结果进行了讨论，结果表明：入射离子能量低于450 keV时，核阻止在碰撞中起主导作用，入射离子能量高于450 keV时，电子阻止在碰撞中起主导作用。

Study of Optical Radiation from Low-energy Xe Ion Irradiation on Al Surface

Optical emission from sputtered Al atoms in the interaction of 200-550 keV Xe10+ ions with Al surface was measured, and spectral line intensity ratio of Al Ⅰ 30810, 30914, 39452 and 39628 nm and photon yield were investigated as a function of the incident ion energy. There is little change for spectral line intensity ratio with the increasing collision ion energy, and the photon yield of the spectral line do not appear the same tendency with the increasing collision energy within the energy of the present experiment. At 450 keV, the photon yield presents a maximum, and the photon yield is reduced with the energy increase when the incident ion energy is more than 450 keV. Combined with the nuclear stopping and electronic stopping effect, it is shown that the nuclear stopping effect plays a leading role in the collision when the incident ion energy is less than 450 keV, and the electron stopping plays a leading role in the collision when the incident ion energy is more than 450 keV.