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Effect of oxygen pressure on the structural and optical properties of ZnO thin films on Si (111) by PLD
Authors:Wang Zhaoyang  Hu Lizhong
Affiliation:a School of Science, Shenyang Institute of Aeronautical Engineering, Shenyang, Liaoning 110136, China
b School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, Liaoning 116024, China
Abstract:ZnO thin films were grown on Si (111) substrates by pulsed laser deposition (PLD) at various oxygen pressures in order to investigate the structural and optical properties of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He-Cd laser. The structural and morphological properties of the films were investigated by XRD and AFM measurements, respectively. The results suggest that films grown at 20 Pa and 50 Pa have excellent UV emission and high-quality crystallinity. The research of PL spectra indicates that UV emission is due to excitonic combination, the green band is due to the replacing of Zn in the crystal lattice for O and the blue band is due to the O vacancies.
Keywords:Oxygen pressure  UV emission  Pulsed laser deposition  ZnO thin films
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