| 介质壁加速器用GaAs光导开关的通态电阻测量 |
| |
| 引用本文： | 谌 怡,刘 毅,王 卫,夏连胜,张 篁,石金水,章林文. 介质壁加速器用GaAs光导开关的通态电阻测量[J]. 太赫兹科学与电子信息学报, 2013, 11(6): 867-870 |
| |
| 作者姓名： | 谌 怡 刘 毅 王 卫 夏连胜 张 篁 石金水 章林文 |
| |
| 作者单位： | a.Institute of Fluid Physics；b.Key Laboratory of Pulsed Power，China Academy of Engineering Physics，Mianyang Sichuan 621999，China;a.Institute of Fluid Physics；b.Key Laboratory of Pulsed Power，China Academy of Engineering Physics，Mianyang Sichuan 621999，China;a.Institute of Fluid Physics；b.Key Laboratory of Pulsed Power，China Academy of Engineering Physics，Mianyang Sichuan 621999，China;a.Institute of Fluid Physics；b.Key Laboratory of Pulsed Power，China Academy of Engineering Physics，Mianyang Sichuan 621999，China;a.Institute of Fluid Physics；b.Key Laboratory of Pulsed Power，China Academy of Engineering Physics，Mianyang Sichuan 621999，China;a.Institute of Fluid Physics；b.Key Laboratory of Pulsed Power，China Academy of Engineering Physics，Mianyang Sichuan 621999，China;a.Institute of Fluid Physics；b.Key Laboratory of Pulsed Power，China Academy of Engineering Physics，Mianyang Sichuan 621999，China |
| |
| 基金项目： | 国家自然科学基金重点资助项目(11035004)；中物院科学技术发展基金资助项目(2013A0402018)，核能技术开发项目 |
| |
| 摘 要： | GaAs光导开关可作为紧凑型脉冲功率系统的主要器件，如光导开关在介质壁加速器中的应用。为了研究通态电阻对开关性能的影响，采用平板传输线和同轴电缆作为脉冲形成线，测量了3mm电极间隙的GaAs光导开关的通态电阻。测量结果表明：电极间隙为3mm的GaAs光导开关的通态电阻为14．9Ω，光导开关通态电阻的存在将导致开关热损伤，降低脉冲功率系统的电压输出能力，缩短GaAs光导开关的使用寿命。
|
| 关 键 词： | GaAs光导开关 平板传输线 同轴电缆 通态电阻 热损伤 |
| 收稿时间： | 2013-01-29 |
| 修稿时间： | 2013-03-11 |
Measurement of on-resistance of GaAs photoconductive semiconductor switch in Dielectric Wall Accelerator |
| |
| SHEN Yi,LIU Yi,WANG Wei,XIA Lian-sheng,ZHANG Huang,SHI Jin-shui and ZHANG Lin-wen. Measurement of on-resistance of GaAs photoconductive semiconductor switch in Dielectric Wall Accelerator[J]. Journal of Terahertz Science and Electronic Information Technology, 2013, 11(6): 867-870 |
| |
| Authors: | SHEN Yi LIU Yi WANG Wei XIA Lian-sheng ZHANG Huang SHI Jin-shui ZHANG Lin-wen |
| |
| Affiliation: | SHEN . YI＇, LIU WANG XIA Yi , Lian-sheng＇, ZHANGHuang, SHI ZHANG Lln-wen Jin-shui , (a.Institute of Fluid Physics; b.Key Laboratory of Pulsed Power, China Academy of Engineering Physics, Mianyang Sichuan 621999, China) |
| |
| Abstract: | GaAs Photoconductive Semiconductor Switch（PCSS） can be the main element in compact pulse power system, especially in Dielectric Wall Accelerator（DWA）. The on-resistance of 3 mm gap GaAs PCSS is measured by using planar transmission line and coaxial-cable in order to study the effect of switch on-resistance on the switch performance. The resuh：s show that the measured on-resistance of GaAs switch is 14.9 Ω. The on-resistance of PCSS will cause the thermal damage to the switch, reduce the output capability of pulsed power system, and shorten the life time of GaAs PCSS as well. |
| |
| Keywords: | GaAs Photoconductive Semiconductor Switch planar transmission line coaxial-cable on-resistance thermal damage |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《太赫兹科学与电子信息学报》浏览原始摘要信息 |
|
点击此处可从《太赫兹科学与电子信息学报》下载免费的PDF全文 |
