Unavoidable front contact model of Si solar cell through a generalized effective medium approximation approach |
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| Authors: | S MAITY V KARTIK P P SAHU P K SWAIN C T BHUNIA S DEBNATH |
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| Affiliation: | 1.Electronics and Communication Engineering,Tezpur University,Tezpur,India;2.Department of Mechanical Engineering,Indian Institute of Technology Bombay,Powai, Mumbai,India;3.Department of Basic Science,National Institute of Technology, Arunachal Pradesh,Naharlagun,India;4.Electronics and Communication Engineering,National Institute of Technology, Arunachal Pradesh,Naharlagun,India;5.Department of Information Technology,Mizoram University,Tanhril,India |
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| Abstract: | Fill factor of the solar cell mainly depends on series resistance and contact resistance, which are the most effective parameters to collect carriers (electrons and holes) from both electrodes of C-Si solar cells. We have used both mathematical and experimental approaches to reduce these resistances for enhancement of power conversion efficiency (PCE) by increasing fill factor. After processing by light-induced plating (LIP) for metal contact, the PCE of solar cell is obtained as 14.43%, which is 8.8% more than that before LIP processing. |
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