Thin-film ferroelectrics of PZT of sol-gel processing |
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| Authors: | Dey S K Budd K D Payne D A |
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| Affiliation: | Dept. of Ceramic Eng., Illinois Univ., Urbana, IL. |
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| Abstract: | The ferroelectric effect has been demonstrated for sol-gel derived lead zirconate titanate (PZT) (53/47) thin films. The respective values of coercive field and remanent polarization were 4x10(6) V/m and 0.36 C/m(2). The thin-film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory, and integrated optical circuit applications. |
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