Stability of short-channel P-channel polysilicon thin-filmtransistors with ECR N2O-plasma gate oxide

Stability of hydrogenated short-channel (⩽3 μm) p-channel poly-Si TFT's with very thin (12 nm) electron cyclotron resonance N₂O plasma gate oxide is investigated. The fabricated poly-Si TFT's with gate length not less than 2 μm show excellent stability characteristics of less than 0.1 V in the threshold voltage shift and less than 3% in the percent change of transconductance after harsh electrical stresses. In a small |V_G| stress, an effective shortening of channel length is observed due to trapping of hot-electrons and the minimum leakage current is decreased. However, a large |V_G| stress causes more degradation on the subthreshold slope and minimum leakage current due to trapping of hot-holes