Femtosecond near-field scanning optical microscopy

We have developed an instrument for optically measuring carrier dynamics in thin-film materials with ≈150 nm lateral resolution, ≈250 fs temporal resolution and high sensitivity. This is accomplished by combining an ultrafast pump–probe laser spectroscopic technique with a near-field scanning optical microscope. A diffraction-limited pump and near-field probe configuration is used, with a novel detection system that allows for either two-colour or degenerate pump and probe photon energies, permitting greater measurement flexibility than that reported in earlier published work. The capabilities of this instrument are proven through near-field degenerate pump–probe studies of carrier dynamics in GaAs/AlGaAs single quantum well samples locally patterned by focused ion beam (FIB) implantation. We find that lateral carrier diffusion across the nanometre-scale FIB pattern plays a significant role in the decay of the excited carriers within ≈1 μm of the implanted stripes, an effect which could not have been resolved with a far-field system.