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半导体器件热测试
引用本文:李道成. 半导体器件热测试[J]. 微纳电子技术, 1993, 0(5)
作者姓名:李道成
作者单位:电子工业部第13研究所 石家庄
摘    要:简要介绍了最常用的三种测温方法的原理及步骤:电学热敏参数法、红外扫描热象法和液晶法。讨论了测试经常遇到的问题,如根据不同需要选择适当的测温方法、不同类型的管子选用不同的电学参数、峰值结温的获得、环境因素的控制等。简单阐述了影响测温精度的因素及解决措施,还比较了各种方法的优缺点。

关 键 词:热测试  砷化镓MESFET  可靠性

Thermal Measurements of Semiconductor Devices
Li Daocheng. Thermal Measurements of Semiconductor Devices[J]. Micronanoelectronic Technology, 1993, 0(5)
Authors:Li Daocheng
Abstract:This paper introduces the principles and procedures of three approaches to device temperature measurement, i. e. temperature-sensitive electrical parameter method, infrared image method, and liquid crystal image method. Measurement problems, such as decision of particular measurements, selection of electrical parameters, obtaining of peak junction temperature, and controlling of environmental factors are addressed. Explanation are given to the factors affecting measurement accuracy and solvable measures. Advantages and disadvantages of each method are also discussed.
Keywords:Thermal measurement   GaAs MESFET   Reliability
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