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Q-band (26?40 GHz) GaAs FET single-stage amplifier
Authors:Oxley   C.H. Peake   A.H. Bennett   R.H.
Affiliation:Plessey Research (Caswell) Ltd, Allen Clark Research Centre, Towcester, UK;
Abstract:The high-frequency S-parameters of a 0.3 ?m-gate-length GaAs FET have been measured and compared with the device equivalent circuit model. From the data a Q-band single-stage low noise (3.1 dB) amplifier was designed.
Keywords:
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