Q-band (26?40 GHz) GaAs FET single-stage amplifier |
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Authors: | Oxley C.H. Peake A.H. Bennett R.H. |
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Affiliation: | Plessey Research (Caswell) Ltd, Allen Clark Research Centre, Towcester, UK; |
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Abstract: | The high-frequency S-parameters of a 0.3 ?m-gate-length GaAs FET have been measured and compared with the device equivalent circuit model. From the data a Q-band single-stage low noise (3.1 dB) amplifier was designed. |
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